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高安明: AlN Lamb wave resonators and the challenges
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高安明: AlN Lamb wave resonators and the challenges
  点击数: 15 发布时间:2018-12-20

报告时间201912日(星期310:00-12:00

报告地点翡翠湖校区科教楼A座第5会议室

报告人:高安明 高级研发工程师

工作单位Skyworks Solution Inc.

举办单位:电子科学与应用物理学院/微电子学院

报告人简介

高安明,男,博士,美国Skyworks Solution Inc. 高级研发工程师。2013年硕士毕业于上海交通大学电子工程系, 2018年博士毕业于伊利诺伊大学厄巴纳-香槟分校电子与计算机工程系,师从Songbin Gong教授。2018年加入Skyworks Solution Inc. 从事声表波滤波器(SAW filter)的研发设计工作,专注于新型材料和新型谐振模式的研究,以提升声表波滤波器的耦合系数、杂散模抑制和品质因数(Q)。博士研究期间研发、设计、制备出目前世界上Q (4500)和耦合系数(1.8%)最高的氮化铝(AlN)拉姆波(Lamb wave)谐振器。近来来,以第一作者或共同作者在IEEE trans. MTT, IEEE JMEMS, IEEE MWCL, IEEE trans. UFFC, Optics Express, IEEE conferences of MEMS, IFCS, IMS, IUS等上发表论文45余篇。曾获Lam Research Corporation杰出研究生奖学金和Nick and Katherine Holonyak, Jr. 研究生奖学金。

报告简介

Radio frequency (RF) microelectromechanical system (MEMS) resonators employing Lamb waves propagating in piezoelectric thin films have recently attracted much attention since they combine the advantages of the bulk acoustic wave (BAW) and surface acoustic wave (SAW) technologies: high phase velocity and multiple frequencies on a single chip. In particular, aluminum nitride (AlN) resonators based on fundamental symmetric (S0) Lamb mode have shown great promise because they can offer high phase velocities (10,000 m/s), low dispersive phase velocity characteristic, small temperature-induced frequency drift, low motional resistance, and monolithic integration compatibility with complementary metal–oxide–semiconductor (CMOS).

However, there are still a few outstanding technical challenges, including spurious modes suppression, quality factor (Q) enhancement, frequency scalability, and electromechanical coupling improvement. These issues obstruct the wide deployment and commercialization of AlN Lamb wave resonators.

This talk presents comprehensive overview of the design and fabrication of the AlN Lamb wave resonators and the solutions to these main issues.


 
 
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